Infineon IRLZ34NSTRLPBF
$ 0.578
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 64AH3720 | 11,529 | 1 | 23h | ||||||||
| Newark | IRLZ34NSTRLPBF | 23,584 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLZ34NSTRLPBF | 108,800 | 800 | Tape & Reel | ||||||||
| Rutronik | TMOSP12700 | 7,200 | 800 | 4h | ||||||||
| Rochester Electronics | IRLZ34NSTRLPBF | 399 | 21h |
Inventory History
3 month trend: -9.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.578
$ 1.25
Stock
942,137
64,721
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
30 A
30 A
Threshold Voltage
2 V
2 V
Rds On Max
35 mΩ
35 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
3.8 W
3.8 W
Input Capacitance
880 pF
880 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of Infineon IRLZ34NSTRLPBF provided by its distributors.
Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK T/R
IRLZ34NSTRLPBF,MOSFET, 55V, 30 A, 35 MOHM, 16.7 NC QG, LOGIC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:30A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes
MOSFET, N, 55V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:21A; Cont Current Id @ 25°C:30A; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:110A; Rth:2.2; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -9.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance880 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance35 mΩ
Package Quantity800
PackagingBulk
Power Dissipation3.8 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time100 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time21 ns
Turn-On Delay Time8.9 ns
Voltage Rating (DC)55 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements