STMicroelectronics STB36NF06LT4
$ 0.718
Production
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Min
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Inventory History
3 month trend: +69.51%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB36NF06LT4.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 months ago)
LTB Date2005-11-30
LTD Date2006-05-31
Related Parts
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N-channel 60 V, 0.22 Ohm typ., 38 A STripFET(TM) II Power MOSFET in a D2PAK package
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;D2Pak;PD 68W;VGS +/-20V;Qg 34
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Descriptions
Descriptions of STMicroelectronics STB36NF06LT4 provided by its distributors.
N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 60V 30A D2PAK
Power Field-Effect Transistor, 30A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 60V, 30A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power D
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +69.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance48 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)18 V
Input Capacitance660 pF
Max Operating Temperature175 °C
Max Power Dissipation70 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time80 ns
Threshold Voltage1 V
Turn-Off Delay Time19 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)60 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB36NF06LT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant