Infineon IRFZ34NSTRLPBF

Name: Infineon IRFZ34NSTRLPBF
Brand: Infineon
SKU: IRFZ34NSTRLPBF

MOSFET N-CH 55V 29A D2PAK "N-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"

$ 0.651

EOL

Datasheet

Manufacturer Page

Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

IRFZ34NSTRLPBF

1,192

Cut Tape

USD

Rochester Electronics

USD

13h

USD

Cut Tape

USD

2.090

1.336

0.904

RS (Formerly Allied Electronics)

IRFZ34NSTRLPBF

800

Bulk

USD

0.930

Inventory History

3 month trend: -10.74%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ34NSTRLPBF.

element14 APAC

Datasheet12 pages22 years ago

IHS

Jameco (USA)

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-10.74%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-11-01

Lifecycle StatusEOL (Last Updated: 3 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFZ34NSTRLPBF provided by its distributors.

MOSFET N-CH 55V 29A D2PAK "N-Channel 55 V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK"

Eurochip Technologies LTD

Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Infineon NChannel EnhancedMOSTube, Vds=55 V, 29 A, D2PAKencapsulation, surface mount, 3Pin

UnikeyIC

Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R

Avnet

IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA

Jameco (USA)

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

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