Infineon IRFZ34NSTRLPBF

Name: Infineon IRFZ34NSTRLPBF
Brand: Infineon
SKU: IRFZ34NSTRLPBF

Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

$ 0.658

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark	2	IRFZ34NSTRLPBF	1,216	1	Cut Tape	2.190	1.450	1.040	0.971	0.971
Future Electronics	2	IRFZ34NSTRLPBF	132,000	800	Tape & Reel				0.605	0.590
Rochester Electronics		IRFZ34NSTRLPBF	4,790					0.758	0.629	0.561	23h
Arrow Electronics	3	IRFZ34NSTRLPBF	802	1		1.181	0.938	0.727	0.582	0.582
DigiKey	3	IRFZ34NSTRLPBFCT-ND	1,576	1	Cut Tape	2.470	1.576	1.067	1.067	1.067

Inventory History

3 month trend: -3.26%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFZ34NSTRLPBF.

Newark

Datasheet12 pages21 years ago

IHS

Jameco

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-3.26%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-11-01

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFZ34NSTRLPBF provided by its distributors.

Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R

Avnet

IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA

Jameco

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68

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