Infineon IPA90R1K0C3XKSA1

Name: Infineon IPA90R1K0C3XKSA1
Brand: Infineon
SKU: IPA90R1K0C3XKSA1

Transistor Mosfet N-ch 900V 5.7A 3-PIN PG-TO-220 Fp

$ 0.913

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IPA90R1K0C3XKSA1	79					1.100	0.913	0.814	9h
Component Stockers USA	IPA90R1K0C3	427			99.990	99.990	99.990	99.990	99.990	23h
Win Source	WS-IPA90R1K0C3	197	20				2.046	1.716	1.716	10h
Worldway Electronics	IPA90R1K0C3XKSA1	11,458	7	Tube		0.968	0.950	0.913	0.895	8h
Aztech	IPA90R1K0C3XKSA1	11,304			1.130	1.130	1.130	1.130	1.130	3h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPA90R1K0C3XKSA1.

IHS

Datasheet10 pages15 years ago

Farnell

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPA90R1K0C3XKSA1

Price @ 1000

$ 0.913

Stock

573,907

Authorized Distributors

Mount

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

900 V

Continuous Drain Current (ID)

5.7 A

Threshold Voltage

Rds On Max

1 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

32 W

Input Capacitance

850 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-07-29

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2020-09-30

LTD Date2021-03-31

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Descriptions

Descriptions of Infineon IPA90R1K0C3XKSA1 provided by its distributors.

Transistor MOSFET N-CH 900V 5.7A 3-Pin PG-TO-220 FP

Avnet

Trans MOSFET N-CH 900V 5.7A 3-Pin(3+Tab) TO-220FP

Verical

Power Field-Effect Transistor, 5.7A I(D), 900V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.7A; Package / Case:TO-220; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Infineon