Infineon SPA07N60CFD
Obsolete
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Inventory History
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CAD Models
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CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-26
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-03-31
LTD Date2020-09-30
Related Parts
STMicroelectronicsSTF10NM60ND
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
STMicroelectronicsSTF11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
Descriptions
Descriptions of Infineon SPA07N60CFD provided by its distributors.
Transistor MOSFET Power N-CH 650V 6.6A 3-PIN PG-TO-220FP
Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N Channel, 650V, 6.6A, To-220Fp-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:6.6A; Tensión Drenaje-Fuente Vds:650V; Resistencia De Activación Rds(On):0.59Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon SPA07N60CFD
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
No data available
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.6 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance790 pF
Max Operating Temperature150 °C
Max Power Dissipation32 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance700 mΩ
Package Quantity500
Power Dissipation32 W
Rds On Max700 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time12 ns
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements