Infineon SPA06N60C3XKSA1

Name: Infineon SPA06N60C3XKSA1
Brand: Infineon
SKU: SPA06N60C3XKSA1

Trans MOSFET N-CH 650V 6.2A Automotive 3-Pin(3+Tab) TO-220FP Tube

$ 0.448

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	SPA06N60C3XKSA1	3,000					1.430	1.190	1.060	16h
Arrow Electronics		SPA06N60C3XKSA1	7	1		0.293	0.293	0.293	0.293	0.293
Win Source	2	WS-SPA06N60C3	27,800	60				1.027	0.685	0.685	17h
Worldway Electronics		SPA06N60C3XKSA1	16,610	7	Tube		0.475	0.466	0.448	0.439	16h
Aztech		SPA06N60C3XKSA1	10,652			3.130	3.130	3.130	3.130	3.130	1d

Inventory History

3 month trend: +639%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPA06N60C3XKSA1.

IHS

Datasheet11 pages0 years ago

Upverter

element14 APAC

Farnell

Inventory History

3 month trend:

+639%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-04-27

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2022-08-15

LTD Date2023-02-15

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Descriptions

Descriptions of Infineon SPA06N60C3XKSA1 provided by its distributors.

Trans MOSFET N-CH 650V 6.2A Automotive 3-Pin(3+Tab) TO-220FP Tube

UnikeyIC

32W 20V 3.9V@ 260uA 24nC@ 10V 1N 650V 750m¦¸@ 10V 6.2A 620pF@ 25V TO-220 10.65mm*4.85mm*16.15mm

Unikeyic (ICkey)

6.2 A 600 V 0.75 ohm N-CHANNEL Si POWER MOSFET TO-220AB

Component Stockers USA

Power Field-Effect Transistor, 6.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N Channel, 650V, 6.2A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes

Newark

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon