Infineon BSS138NH6327XTSA2

Name: Infineon BSS138NH6327XTSA2
Brand: Infineon
SKU: BSS138NH6327XTSA2

Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount

$ 0.072

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Avnet	2	BSS138NH6327XTSA2	200,000	3K						0.023	2d
Newark	2	BSS138NH6327XTSA2	135,785	1	Cut Tape	0.278	0.162	0.105	0.079	0.079
Arrow Electronics		BSS138NH6327XTSA2	31,495	1		0.041	0.041	0.041	0.041	0.041
DigiKey	3	BSS138NH6327XTSA2CT-ND	21,979	1	Cut Tape	0.290	0.178	0.111	0.072	0.072
Future Electronics	2	BSS138NH6327XTSA2	0	3K	Tape & Reel					0.026

Inventory History

3 month trend: -23.22%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSS138NH6327XTSA2.

element14 APAC

Datasheet9 pages14 years ago

Newark

iiiC

Farnell

Inventory History

3 month trend:

-23.22%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSS138NH6327XTSA2

InfineonBSS138N H6433

Price @ 1000

$ 0.072

Stock

6,718,281

508,856

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

230 mA

Threshold Voltage

1 V

Rds On Max

3.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

360 mW

Input Capacitance

32 pF

Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date2003-06-10

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2012-06-30

LTD Date2012-12-31

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Descriptions

Descriptions of Infineon BSS138NH6327XTSA2 provided by its distributors.

Power MOSFET, N Channel, 60 V, 230 mA, 3.5 Ohm, SOT-23, 3 Pins, Surface Mount

Avnet

Infineon Technologies N channel SIPMOS small signal transistor, 60 V, 0.23 A, SOT-23, BSS138N

Burklin Elektronik

Single N-Channel 60 V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23

Future Electronics

60V 230mA 3.5´Î@10V230mA 360mW 1.4V@26Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

MOSFET Devices; INFINEON; BSS138NH6327XTSA2; 60 V; 230 mA; 20 V; 360 mW

Maritex

SIPMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:230Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies BSS138NH6327XTSA2.

Newark

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 230 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 8.2 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 6.7 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

Distrelec

N CHANNEL MOSFET, 230MA, 60V, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Current Id Max:230mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:360mW; Pulse Current Idm:920mA; Rate of Voltage Change dv / dt:6kV/µs; SMD Marking:SKs; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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