onsemi NDS7002A

Name: onsemi NDS7002A
Brand: onsemi
SKU: NDS7002A

Transistor: N-MOSFET; unipolar; 60V; 0.28A; 2ohm; 300mW; -65+150 deg.C; SMD; SOT23

$ 0.087

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Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Future Electronics	2	NDS7002A	138,000	3K	Tape & Reel					0.028
Avnet	2	NDS7002A	69,000	3K						0.024	2d
Newark	2	NDS7002A	4,154	1	Cut Tape	0.327	0.327	0.135	0.120	0.120
Verical	5	NDS7002A	42,000	3K						0.028
Arrow Electronics	4	NDS7002A	2,397	1		0.265	0.152	0.099	0.045	0.045

Inventory History

3 month trend: +128%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDS7002A.

IHS

Datasheet12 pages2 years ago

Datasheet0 pages0 years ago

Upverter

Future Electronics

onsemi

Farnell

Inventory History

3 month trend:

+128%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-03-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi NDS7002A provided by its distributors.

Transistor: N-MOSFET; unipolar; 60V; 0.28A; 2ohm; 300mW; -65+150 deg.C; SMD; SOT23

Maritex

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 5Ω

onsemi

Power MOSFET, N Channel, 60 V, 280 mA, 2 ohm, SOT-23, Surface Mount

Avnet

Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R

Rotakorn

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 280 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 300

Distrelec

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Fairchild Semiconductor