Vishay SUP80090E-GE3

Name: Vishay SUP80090E-GE3
Brand: Vishay
SKU: SUP80090E-GE3

375W(Tc) 20V 5V@ 250¦ÌA 95nC@ 10 V 1N 150V 9.4m¦¸@ 30A, 10V 128A 3.425nF@75V TO-220AB 9.01mm

$ 1.61

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Distributor		SKU		Min	Pkg
Arrow Electronics		SUP80090E-GE3	500	1		3.767	2.602	1.882	1.620	1.620
Verical		SUP80090E-GE3	500	4			2.586	1.870	1.610	1.610
DigiKey		SUP80090E-GE3-ND	487	1	Tube	4.330	2.844	2.000	1.525	1.375
TME	2	SUP80090E-GE3	0	1		4.580*	3.002*	2.755*	2.755*	2.755*	19h
Newark		SUP80090E-GE3	0	1		3.930	2.780	1.850	1.390	1.390

Inventory History

3 month trend: Restocked

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SUP80090E-GE3.

IHS

Datasheet8 pages10 years ago

element14 APAC

Newark

Future Electronics

TME

Inventory History

3 month trend:

Restocked

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Supply Chain

Country of OriginGermany

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-05-02

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SUP80090E-GE3 provided by its distributors.

375W(Tc) 20V 5V@ 250¦ÌA 95nC@ 10 V 1N 150V 9.4m¦¸@ 30A,10V 128A 3.425nF@75V TO-220AB 9.01mm

Unikeyic (ICkey)

N-Channel 150 V 9.4 mOhm 375 W ThunderFET Power Mosfet - TO-220AB

Future Electronics

Trans MOSFET N-CH 150V 128A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 128A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 150V, 128A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:128A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay SUP80090E-GE3

Newark