Infineon IRFB4115PBF

Name: Infineon IRFB4115PBF
Brand: Infineon
SKU: IRFB4115PBF

Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

$ 1.04

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRFB4115PBF	143	50				1.034	0.839	0.839	1d
Newark	2	IRFB4115PBF	1,803	1		1.430	1.430	1.390	1.060	1.010
Future Electronics	2	IRFB4115PBF	25,915	50	Tube			1.070	1.040	1.010
Arrow Electronics	2	IRFB4115PBF	8,945	1		2.925	1.918	1.470	1.374	1.374
Rutronik		TMOSP12116	1,100	50				1.093	0.874	0.874	21h

Inventory History

3 month trend: -10.14%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB4115PBF.

Newark

Datasheet9 pages11 years ago

IHS

element14 APAC

iiiC

Inventory History

3 month trend:

-10.14%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFB4115PBF

InfineonIRFB4115GPBF

Price @ 1000

$ 1.04

$ 7.08

Stock

1,278,333

63,616

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

104 A

Threshold Voltage

5 V

Rds On Max

11 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

380 W

Input Capacitance

5.27 nF

Supply Chain

Country of OriginTaiwan, USA

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-10

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IRFB4115PBF provided by its distributors.

Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 150V 104A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB

RS (Formerly Allied Electronics)

HEXFET POWER MOSFET Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

N Channel Mosfet, 150V, 104A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:104A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB4115PBF.

Newark

MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon