Infineon IRFB4321PBF

IRFB4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-220AB

Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB

Single N-Channel 150V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Power MOSFET, N Channel, 150 V, 83 A, 0.015 ohm, TO-220AB, Through Hole

Infineon N-Channel HEXFET MOSFET, Vds=150V, 85A, TO-220AB, TH, 3-Pin

Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; N-channel Gate Charge:71nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.