Vishay SI2301CDS-T1-GE3

Name: Vishay SI2301CDS-T1-GE3
Brand: Vishay
SKU: SI2301CDS-T1-GE3

P-ch Mosfet SOT-23 20V 112MOHM @ 4.5V - Lead(pb) And Halogen Free

$ 0.2

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	16P3701	6	1		0.299	0.299	0.299	0.299	0.299	1d
Newark	2	SI2301CDS-T1-GE3	6	1	Cut Tape	1.290	1.290	0.596	0.299	0.299
Verical	4	SI2301CDS-T1-GE3	15,000	3K						0.097
Arrow Electronics	3	SI2301CDS-T1-GE3	99	1		0.740	0.455	0.237	0.237	0.237
Future Electronics	2	SI2301CDS-T1-GE3	345,000	3K	Tape & Reel					0.157

Inventory History

3 month trend: -45.50%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2301CDS-T1-GE3.

Newark

Datasheet8 pages5 years ago

Datasheet9 pages13 years ago

Datasheet6 pages16 years ago

Datasheet9 pages11 years ago

element14 APAC

Farnell

TME

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-45.50%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI2301CDS-T1-GE3

VishaySI2301CDS-T1-E3

Price @ 1000

$ 0.2

$ 0.19

Stock

8,907,923

837,402

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Drain to Source Voltage (Vdss)

-20 V

Continuous Drain Current (ID)

3.1 A

Threshold Voltage

-1 V

Rds On Max

112 mΩ

65 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

1.6 W

860 mW

Input Capacitance

405 pF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-29

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI2301CDS-T1-GE3 provided by its distributors.

P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE

Future Electronics

Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3

Win Source

Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, TO-236, Surface Mount

Avnet

P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3100mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.142ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:860mW ;RoHS Compliant: Yes

Newark

MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3

Farnell