Vishay SI2302DDS-T1-GE3

Name: Vishay SI2302DDS-T1-GE3
Brand: Vishay
SKU: SI2302DDS-T1-GE3

VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V

$ 0.153

NRND

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Distributor		SKU		Min	Pkg
Newark	2	SI2302DDS-T1-GE3	5,918	1	Cut Tape	0.381	0.381	0.200	0.148	0.148
Verical	3	SI2302DDS-T1-GE3	1,130	13				0.244	0.168	0.105
Arrow Electronics	2	SI2302DDS-T1-GE3	1,130	1		0.439	0.384	0.244	0.168	0.168
Rutronik		LVMOS1568	3,000	3K						0.123	12h
TME	2	SI2302DDS-T1-GE3	5,588	1		0.666*	0.432*	0.270*	0.182*	0.137*	18h

Inventory History

3 month trend: -6.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2302DDS-T1-GE3.

Upverter

Datasheet8 pages5 years ago

Technical Drawing1 page18 years ago

Newark

Farnell

TME

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-6.53%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-16

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI2302DDS-T1-GE3 provided by its distributors.

VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V

Fly-Wing Technology

SI2302DDS Series N-Channel 20 V 2.6 A 0.067 O 3.5 nC SMT Mosfet - SOT-23

Future Electronics

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EBV Elektronik

20V 2.9A 57m´Î@4.5V3.6A 710mW 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R

Verical

Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:-; Power Dissipation:710mW; No. of Pins:3Pins RoHS Compliant: No

Newark