onsemi FDN335N

Name: onsemi FDN335N
Brand: onsemi
SKU: FDN335N

N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ

$ 0.177

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	FDN335N	324,000	6250							1d
Future Electronics	2	FDN335N	309,000	3K	Tape & Reel					0.134
Newark	2	FDN335N	831	1	Cut Tape	0.731	0.731	0.289	0.198	0.198
Verical	7	FDN335N	39	12				0.268	0.177	0.120
Arrow Electronics	3	FDN335N	39	1		0.547	0.365	0.365	0.365	0.365

Inventory History

3 month trend: -10.80%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDN335N.

IHS

Datasheet7 pages3 years ago

Datasheet5 pages26 years ago

JRH Electronics

onsemi

Farnell

element14 APAC

Inventory History

3 month trend:

-10.80%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDN335N

onsemiNDS335N

Price @ 1000

$ 0.177

$ 0.175

Stock

3,959,713

397,016

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

1.7 A

Threshold Voltage

900 mV

Rds On Max

70 mΩ

110 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

500 mW

460 mW

Input Capacitance

310 pF

240 pF

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDN335N provided by its distributors.

N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ

onsemi

N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3

Future Electronics

ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount

Fly-Wing Technology

N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe

Farnell

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Fairchild Semiconductor