onsemi FDG6322C

Name: onsemi FDG6322C
Brand: onsemi
SKU: FDG6322C

Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm

$ 0.141

EOL

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDG6322C	6				0.170	0.141	0.126	22h
Newark	2	FDG6322C	0	3K	Tape & Reel				0.205
Avnet		FDG6322C	0	6K						3d
Farnell	3	FDG6322C_	0	5	Cut Tape	0.428*	0.282*	0.184*	0.138*	21h
element14 APAC	2	FDG6322C_	0	5	Cut Tape	0.262*	0.234*	0.173*	0.163*	14h

Inventory History

3 month trend: -72.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDG6322C.

Farnell

Datasheet10 pages4 years ago

Datasheet0 pages0 years ago

Datasheet9 pages0 years ago

Datasheet0 pages0 years ago

IHS

Upverter

Master Electronics

onsemi

Inventory History

3 month trend:

-72.23%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1999-02-01

Lifecycle StatusEOL (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FDG6322C provided by its distributors.

Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm

EBV Elektronik

Transistor: N+P-MOSFET; unipolar; 25V/-25V; 0.22A/-0.41A; 4/1.1ohm; 0.3W; -55+150 deg.C; SMD; SC70-6

Maritex

Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N & P CH, 25V, 220MA, SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Fairchild Semiconductor