onsemi FDG6303N

Name: onsemi FDG6303N
Brand: onsemi
SKU: FDG6303N

Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R

$ 0.155

EOL

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Distributor	SKU		Min	Pkg
Arrow Electronics	FDG6303N	1	1		0.155	0.155	0.155	0.155	0.155
Master Electronics	FDG6303N	9,000	3K						0.086
Onlinecomponents.com	FDG6303N	9,000	3K	Bulk					0.086
Newark	FDG6303N	0	3K	Cut Tape					0.183
Avnet	FDG6303N	0	9K							3d

Inventory History

3 month trend: -46.19%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDG6303N.

Upverter

Datasheet5 pages26 years ago

IHS

Future Electronics

onsemi

Farnell

Inventory History

3 month trend:

-46.19%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-02-01

Lifecycle StatusEOL (Last Updated: 22 hours ago)

LTB Date2025-04-18

LTD Date2025-10-18

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 22 hours ago)

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Descriptions

Descriptions of onsemi FDG6303N provided by its distributors.

Transistor MOSFET Negative Channel 25 Volt 0.5A 6-Pin SC-70 T/R

Jameco

MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 MilliOhms, SC-88 (SOT-363), 6 Pins

Avnet Silica

DUAL N-CHANNEL, DIGITAL FET Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV

element14 APAC

MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:25V; Current, Id Cont:0.5A; On State Resistance:0.34ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.8V; Case Style:SC-70; Termination Type:SMD; Transistor Case Style:SC-70

Farnell

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Fairchild Semiconductor