Infineon SPP11N80C3XKSA1

Name: Infineon SPP11N80C3XKSA1
Brand: Infineon
SKU: SPP11N80C3XKSA1

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220, Through Hole

$ 1.29

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	47Y8131	23	1		3.610	1.820	1.650	1.390	1.390	1d
Newark		SPP11N80C3XKSA1	23	1		1.270	1.270	1.270	1.270	1.230
Rutronik		TMOSP9418	300	50				1.320	1.049	1.049	7h
Rochester Electronics		SPP11N80C3XKSA1	1,883					1.600	1.330	1.180	1d
DigiKey		SPP11N80C3XKSA1-ND	3,040	1	Tube	4.510	4.510	2.059	1.558	1.345

Inventory History

3 month trend: -13.92%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPP11N80C3XKSA1.

IHS

Datasheet10 pages17 years ago

Farnell

iiiC

Factory Futures

DigiKey

Inventory History

3 month trend:

-13.92%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonSPP11N80C3XKSA1

Price @ 1000

$ 1.29

Stock

1,306,062

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Drain to Source Voltage (Vdss)

800 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

Rds On Max

450 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

156 W

Input Capacitance

1.6 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-11-07

Lifecycle StatusNRND (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon SPP11N80C3XKSA1 provided by its distributors.

Power MOSFET, N Channel, 800 V, 11 A, 0.39 ohm, TO-220, Through Hole

EBV Elektronik

COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Diss

Farnell

800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

Infineon