STMicroelectronics STP13N80K5
$ 1.525
Production
Inventory History
3 month trend: +65.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP13N80K5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-15
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP13N80K5 provided by its distributors.
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package
STP13N80K5 N-CHANNEL MOSFET TRANSISTOR, 12 A, 800 V, 3-PIN TO-220
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh K5, SuperMESH5series, Vds=800 V, 12 A, TO-220encapsulation, Through hole mounting, 3Pin
Mosfet, N-Ch, 800V, 12A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP13N80K5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +65.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance870 pF
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max450 mΩ
Rise Time16 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time16 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP13N80K5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant