STMicroelectronics STP15N80K5
$ 1.87
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SKU
Min
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Inventory History
3 month trend: -83.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP15N80K5.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP15N80K5 provided by its distributors.
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220 package
STP15N80K5 N-CHANNEL MOSFET TRANSISTOR, 14 A, 800 V, 3-PIN TO-220
STP15K80K5 Series N-Channel 800 V 375 mOhm SuperMESH 5 Power Mosfet - TO-220-3
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220AB Tube
N-CHANNEL 800 V, 0.3 OHMS TYP, 14 A SUPER MESH5 POWER MOSFET IN TO-220 PACKAGE Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh K5, SuperMESH5series, Vds=800 V, 14 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 800V, 14A, TO-220-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -83.11%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance375 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max375 mΩ
Resistance375 mΩ
Rise Time17.6 ns
Turn-Off Delay Time44 ns
Turn-On Delay Time19 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP15N80K5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant