Infineon SPP11N65C3XKSA1

Name: Infineon SPP11N65C3XKSA1
Brand: Infineon
SKU: SPP11N65C3XKSA1

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min
Farnell	SPP11N65C3XKSA1	0	1	3.400*	2.540*	2.217*	1.841*	1.841*	5h
Win Source	WS-SPP11N65C3XKSA1	20	35			1.350	1.097	1.097	6h
Aztech	SPP11N65C3XKSA1	9,743		7.340	7.340	7.340	7.340	7.340	1h
Run Hong Electronics	SPP11N65C3XKSA1	8,968		0.920	0.920	0.920	0.920	0.920	17h
Fly-Wing Technology	SPP11N65C3XKSA1	2,323		1.139	1.075	1.014	0.903	0.903	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet15 pages20 years ago

TME

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Supply Chain

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon SPP11N65C3XKSA1 provided by its distributors.

Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube

Verical

Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 650V, 11A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

Newark

Replacement for 650V CoolMOS C3 is 650V CoolMOS C6/E6 >> Click & go to 650V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter

Infineon