Infineon SPP11N60C3XKSA1

Name: Infineon SPP11N60C3XKSA1
Brand: Infineon
SKU: SPP11N60C3XKSA1

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube

$ 1.238

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Newark	SPP11N60C3XKSA1	361	1		3.790	2.890	1.990	1.660	1.600
Arrow Electronics	SPP11N60C3XKSA1	13,883	1		4.374	4.374	1.987	1.498	1.308
Rutronik	TMOSP10023	5,400	50				1.074	0.859	0.859	4h
Rochester Electronics	SPP11N60C3XKSA1	240					1.480	1.230	1.100	21h
DigiKey	SPP11N60C3XKSA1-ND	2,164	1	Tube	3.640	3.640	1.654	1.246	1.088

Inventory History

3 month trend: +2.58%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon SPP11N60C3XKSA1.

Farnell

Datasheet16 pages20 years ago

Datasheet6 pages17 years ago

IHS

element14 APAC

iiiC

DigiKey

Inventory History

3 month trend:

+2.58%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonSPP11N60C3XKSA1

onsemiFCP11N60F

Price @ 1000

$ 1.238

$ 1.669

Stock

1,264,360

243,117

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

TO-220AB

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

11 A

Threshold Voltage

5 V

Rds On Max

380 mΩ

Gate to Source Voltage (Vgs)

20 V

30 V

Power Dissipation

125 W

Input Capacitance

1.2 nF

1.49 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-05-28

Lifecycle StatusNRND (Last Updated: 4 months ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon SPP11N60C3XKSA1 provided by its distributors.

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube

Verical

MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 125 W

Distrelec

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 650V, 11A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Msl:- Rohs Compliant: Yes

Newark

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Infineon