STMicroelectronics STP18NM60N
$ 1.24
Production
Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18NM60N.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP18NM60N provided by its distributors.
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3
STP18NM60N N-CHANNEL MOSFET TRANSISTOR, 13 A, 600 V, 3-PIN TO-220
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=600 V, 13 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 600V, 13A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance285 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max285 mΩ
Resistance285 mΩ
Rise Time15 ns
Threshold Voltage3 V
Turn-Off Delay Time55 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant