Infineon IRFB38N20DPBF

Name: Infineon IRFB38N20DPBF
Brand: Infineon
SKU: IRFB38N20DPBF

Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.054 Ohm; Id 43A; TO-220AB; Pd 300W; Vgs +/-30V

$ 1.283

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Distributor		SKU		Min	Pkg
Avnet	2	IRFB38N20DPBF	5,870	50				1.068	0.997	0.997	2d
Newark	2	IRFB38N20DPBF	5,870	50				1.960	1.960	1.960
Future Electronics	2	IRFB38N20DPBF	400	50	Tube			1.980	1.930	1.880
Arrow Electronics	3	IRFB38N20DPBF	66,029	1		1.433	1.433	1.336	1.129	1.050
Rochester Electronics	2	IRFB38N20DPBF	11,864					1.530	1.270	1.130	20h

Inventory History

3 month trend: +82.07%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB38N20DPBF.

ODG (Origin Data Global)

Datasheet12 pages9 years ago

IHS

iiiC

RS (Formerly Allied Electronics)

DigiKey

Inventory History

3 month trend:

+82.07%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-12-12

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRFB38N20DPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;TO-220AB;PD 300W;VGS +/-30V

RS (Formerly Allied Electronics)

Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3

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200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

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Power MOSFET, N Channel, 200 V, 44 A, 0.054 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 200V 38A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 200V, 44A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.47°C/W; On State resistance @ Vgs = 10V:54ohm; Package / Case:TO-220AB; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon