onsemi FDP52N20
$ 1.534
Production
Inventory History
3 month trend: +128%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W
InfineonIRFB42N20DPBF
N-Ch MOSFET 200V 2.4W(Ta) 330W(Tc) 5.5V@250µA 140nC@10V 55mΩ@26A,10V 3.43nF@25V TO-220AB TH
Descriptions
Descriptions of onsemi FDP52N20 provided by its distributors.
N-Channel Power MOSFET, UniFETTM, 200V, 52A, 49mΩ, TO-220
FDP52N20 Series 200 V 52 A 0.049 Ohm Through Hole N-Channel MOSFET - TO-220-3
MOSFET, N-Ch, 200V, 52A, 49mΩ@26A,10V, 2.9nF@25V, TO-220-3, TH, 9.4mm H
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +128%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)52 A
Current Rating52 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max49 mΩ
Resistance49 MΩ
Rise Time175 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time48 ns
Turn-On Delay Time53 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements