Infineon IRFB42N20DPBF

N-Ch MOSFET 200V 2.4W(Ta) 330W(Tc) 5.5V@250µA 140nC@10V 55mΩ@26A,10V 3.43nF@25V TO-220AB TH

Single N-Channel 200 V 0.055 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3

Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A) | MOSFET N-CH 200V 44A TO-220AB

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

MOSFET, 200V, 42.6A, 55 mOhm, 91 nC Qg, TO-220AB

Trans MOSFET N-CH 200V 44A 3-Pin(3+Tab) TO-220AB

MOSFET, N, 200V, 42.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:42.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Junction to Case Thermal Resistance A:0.5°C/W; On State resistance @ Vgs = 10V:55ohm; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design