Infineon IRFB41N15DPBF

Name: Infineon IRFB41N15DPBF
Brand: Infineon
SKU: IRFB41N15DPBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.045 Ohm; Id 41A; TO-220AB; Pd 200W; Vgs +/-30V

$ 4.94

Obsolete

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFB41N15DPBF	0	250	Bulk				4.940	4.280	1h
Farnell		IRFB41N15DPBF	0	1		1.256*	0.940*	0.732*	0.732*	0.732*	12h
Microchip USA		IRFB41N15D	50	600	Tube				1.666	1.666	6d
Win Source	2	WS-IRFB41N15DPBF	4,298	35				1.373	1.116	1.116	13h
Worldway Electronics	2	IRFB41N15DPBF	9,363	7	Tube		1.478	1.433	1.358	1.358	11h

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFB41N15DPBF.

IHS

Datasheet13 pages9 years ago

Datasheet13 pages19 years ago

Datasheet13 pages22 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFB41N15DPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V

RS (Formerly Allied Electronics)

Single N-Channel 150 V 0.045 Ohm 72 nC HEXFET® Power Mosfet - TO-220-3

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150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 41A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon

MOSFET, N, 150V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:41A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:164A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC