Infineon IRF8707PBF

IRF8707PBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
Obsolete

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8707PBF.

IHS

Datasheet9 pages18 years ago
Datasheet10 pages18 years ago

Farnell

CAD Models

Download Infineon IRF8707PBF symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

Price @ 1000
$ 0.377
$ 0.377
Stock
678,212
1,904,685
1,904,685
Authorized Distributors
2
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
SO
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
1.8 V
1.8 V
1.8 V
Rds On Max
11.9 mΩ
11.9 mΩ
11.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
760 pF
760 pF
760 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16

Related Parts

N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V
onsemiFDS6680A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ
onsemiFDS6294
N-Channel Fast Switching PowerTrench® MOSFET, 30V, 13A, 11.3mΩ
InfineonIRF8313TRPBF
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC T/R
onsemiFDS6670A
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 13A, 8mΩ

Descriptions

Descriptions of Infineon IRF8707PBF provided by its distributors.

IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC
Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube
Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Charge Qrr @ Tj = 25°C Typ:6.2nC; Current Id Max:11A; Package / Case:SOIC-8; Pulse Current Idm:88A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • SP001560112