Infineon IRF7413ZTRPBF

Name: Infineon IRF7413ZTRPBF
Brand: Infineon
SKU: IRF7413ZTRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 8 Milliohms; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.241

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7413ZTRPBF	3,510	1		0.659	0.486	0.356	0.279	0.279
Rochester Electronics		IRF7413ZTRPBF	34					0.245	0.203	0.181	14h
RS (Formerly Allied Electronics)		IRF7413ZTRPBF	0	4K	Bulk					0.460	7h
Avnet		IRF7413ZTRPBF	0	4K							16h
Farnell	2	IRF7413ZTRPBF	0	1	Cut Tape	1.016*	0.756*	0.497*	0.329*	0.329*	1h

Inventory History

3 month trend: -20.99%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7413ZTRPBF.

element14 APAC

Datasheet10 pages18 years ago

Farnell

RS (Formerly Allied Electronics)

iiiC

DigiKey

Inventory History

3 month trend:

-20.99%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7413ZTRPBF

InfineonIRF7413TRPBF

Price @ 1000

$ 0.241

$ 0.54

Stock

1,127,150

1,452,883

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

13 A

Threshold Voltage

1.8 V

3 V

Rds On Max

10 mΩ

11 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

1.21 nF

1.8 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-05-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-09-30

LTD Date2026-03-31

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Descriptions

Descriptions of Infineon IRF7413ZTRPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R

Avnet Japan

189W 20V 4.5V@ 760uA 67nC@ 10V 1N 600V 75m¦¸@ 15.1A,10V 33A 2.721nF@ 400V SOIC

UnikeyIC

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 3.8 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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