Infineon IRF7862PBF

Name: Infineon IRF7862PBF
Brand: Infineon
SKU: IRF7862PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.7MILLIOHMS; Id 21A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7862PBF	0	3800	Bulk					1.510	20h
Farnell	IRF7862PBF	0	1		1.689*	1.347*	1.027*	0.719*	0.695*	1d
Win Source	WS-IRF7862PBF	17,860	50				1.159	0.773	0.773	4h
Anlinkda	IRF7862PBF	34,970			0.150	0.134	0.113	0.113	0.103	11h
RC Electronics	IRF7862PBF	31,412	1		0.110	0.100	0.090	0.090	0.080	>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7862PBF.

IHS

Datasheet9 pages16 years ago

Datasheet10 pages16 years ago

Newark

iiiC

RS (Formerly Allied Electronics)

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7862PBF

InfineonIRF7862TRPBF

Price @ 1000

$ 0.501

Stock

99,022

1,049,885

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

21 A

Threshold Voltage

5.4 V

Rds On Max

3.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

Input Capacitance

4.09 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-03-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF7862PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.7Milliohms;ID 21A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

HEXFET Power MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:30nC; Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:170A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V

element14 APAC