Descriptions of Infineon IRF640NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
Transistor: N-MOSFET; unipolar; 200V; 18A; 0.15ohm; 150W; -55+175 deg.C; THT; TO220
200 Volt 18 Amp Single N-Channel HEXFET Power MOSFET TO-220 Fast Switching
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 18 A, TO-220, IRF640NPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 18A/200V TO220 IRF 640 N PBF
Power MOSFET, N Channel, 200 V, 18 A, 0.15 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
200V 18A 150W 150m¦¸@10V,11A 4V@250¦ÌA N Channel TO-220(TO-220-3) MOSFETs ROHS
HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V