Infineon IRFB4020PBF

200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon Technologies N channel digital audio MOSFET, 200 V, 18 A, TO-220, IRFB4020PBF

MOSFET N-CH 200V 18A TO220AB N-Channel 200 V 18A (Tc) 100W (Tc) Through Hole TO-220AB

Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

MOSFET, N CH., DIGITAL AUDIO, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, PB-FREE

Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4020; Current Id Max:18A; N-channel Gate Charge:18nC; Package / Case:TO-220AB; Power Dissipation Pd:100W; Power Dissipation Pd:100mW; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.