Vishay IRF640PBF

Name: Vishay IRF640PBF
Brand: Vishay
SKU: IRF640PBF

Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3

$ 0.895

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	IRF640PBF	4,595	1		1.124	1.070	1.058	1.058	1.058	1d
Newark	2	IRF640PBF.	4,595	1		4.050	2.280	2.070	1.680	1.540
Verical	3	IRF640PBF	18	9			1.005	0.839	0.693	0.693
Arrow Electronics	2	IRF640PBF	77	1		2.249	1.440	1.440	1.440	1.440
RS (Formerly Allied Electronics)		IRF640PBF	703	1	Bulk	0.970	0.970	0.970	0.970	0.970	20h

Inventory History

3 month trend: -54.75%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF640PBF.

IHS

Datasheet7 pages2 years ago

Upverter

Arrow Electronics

Newark

element14 APAC

Inventory History

3 month trend:

-54.75%

CAD Models

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Supply Chain

Country of OriginIsrael

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-07-08

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRF640PBF provided by its distributors.

Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole

Avnet

Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 200V, 18A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Vishay IRF640PBF.

Newark

MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V

Farnell

MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC