Infineon IPD30N06S223ATMA2

Name: Infineon IPD30N06S223ATMA2
Brand: Infineon
SKU: IPD30N06S223ATMA2

Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2

$ 0.575

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPD30N06S223ATMA2	2,450	1		1.106	0.909	0.660	0.536	0.536
Rochester Electronics		IPD30N06S223ATMA2	18,153					0.593	0.492	0.439	1d
DigiKey	2	448-IPD30N06S223ATMA2CT-ND	1,941	1	Cut Tape	1.870	1.188	0.797	0.575	0.575
Newark		IPD30N06S223ATMA2	0	1	Cut Tape	1.800	1.260	0.924	0.717	0.717
Avnet		IPD30N06S223ATMA2	0	2500						0.439	5d

Inventory History

3 month trend: -8.91%

CAD Models

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Datasheets & Documents

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IHS

Datasheet8 pages19 years ago

iiiC

Inventory History

3 month trend:

-8.91%

CAD Models

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-07-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPD30N06S223ATMA2 provided by its distributors.

Mosfet, N-Ch, 30A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD30N06S223ATMA2

Newark

55V, N-Ch, 23 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 30A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon