Vishay SIS434DN-T1-GE3

Name: Vishay SIS434DN-T1-GE3
Brand: Vishay
SKU: SIS434DN-T1-GE3

Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8

$ 0.658

NRND

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Newark	3	SIS434DN-T1-GE3	26,083	5	Cut Tape		1.310	0.780	0.780	0.780
Verical		SIS434DN-T1-GE3	90	5			1.362	1.362	1.362	1.362
Arrow Electronics		SIS434DN-T1-GE3	90	1		1.397	1.397	1.397	1.397	1.397
Future Electronics		SIS434DN-T1-GE3	57,000	3K	Tape & Reel					0.470
TTI		SIS434DN-T1-GE3	21,000	3K	Tape & Reel					0.400	7h

Inventory History

3 month trend: -73.54%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SIS434DN-T1-GE3.

Farnell

Datasheet12 pages4 years ago

Datasheet13 pages13 years ago

Datasheet7 pages15 years ago

Datasheet7 pages16 years ago

Datasheet13 pages11 years ago

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RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-73.54%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-09-25

Lifecycle StatusNRND (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SIS434DN-T1-GE3 provided by its distributors.

Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8

Future Electronics

MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R

Win Source

MOSFET N-CH 40V 35A PPAK 1212-8 | Siliconix / Vishay SIS434DN-T1-GE3

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 17.6A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 40V 35A PPAK 1212-8

DigiKey

3.8W(Ta),52W(Tc) 20V 2.2V@ 250¦ÌA 40nC@ 10 V 1N 40V 7.6m¦¸@ 16.2A,10V 35A 1.53nF@20V 1212 3.05mm*3.05mm*1.07mm

UnikeyIC

FET Input Operational Amplifier

Weyland Electronics Group Pte. Ltd.

MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:17.6A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V

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