Infineon AUIRFR4105Z

Name: Infineon AUIRFR4105Z
Brand: Infineon
SKU: AUIRFR4105Z

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

$ 0.524

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Arrow Electronics	AUIRFR4105Z	6	1		0.524	0.524	0.524	0.524	0.524
RS (Formerly Allied Electronics)	AUIRFR4105Z	0	5	Bulk		3.250	2.860	2.860	2.860	14h
Component Stockers USA	AUIRFR4105Z	3			0.520	0.520	0.520	0.520	0.520	>1wk
Win Source	WS-AUIRFR4105Z	17,800	7			8.644	5.762	5.762	5.762	2h
Worldway Electronics	AUIRFR4105Z	8,576	7	Tube		0.556	0.545	0.524	0.514	2h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRFR4105Z.

IHS

Datasheet12 pages10 years ago

Datasheet14 pages15 years ago

TME

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRFR4105Z

InfineonIRFR4105ZTRPBF

Price @ 1000

$ 0.524

$ 1.22

Stock

284,213

261,246

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

2 V

Rds On Max

24.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

48 W

Input Capacitance

740 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-07-23

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2021-08-15

LTD Date2022-02-15

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Descriptions

Descriptions of Infineon AUIRFR4105Z provided by its distributors.

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Infineon SCT

Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK

Future Electronics

Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon

MOSFET,N CH,55V,30A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:48W; Voltage Vgs Max:20V

element14 APAC