Infineon BSC190N15NS3GATMA1

Name: Infineon BSC190N15NS3GATMA1
Brand: Infineon
SKU: BSC190N15NS3GATMA1

MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

$ 1.027

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	BSC190N15NS3GATMA1	75,000	5K						0.519	5d
Newark	2	BSC190N15NS3GATMA1	3,125	1	Cut Tape	3.180	1.980	1.410	1.410	1.410
Future Electronics	3	BSC190N15NS3GATMA1	40,000	5K	Tape & Reel					0.855
Arrow Electronics	2	BSC190N15NS3GATMA1	19,386	1		2.636	1.787	1.261	1.200	1.200
Rutronik		TMOSP9607	50,020	5K						0.962	1d

Inventory History

3 month trend: +3.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC190N15NS3GATMA1.

IHS

Datasheet9 pages15 years ago

Farnell

iiiC

Inventory History

3 month trend:

+3.53%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSC190N15NS3GATMA1

InfineonBSC160N15NS5ATMA1

Price @ 1000

$ 1.027

$ 1.22

Stock

1,752,039

1,378,639

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

50 A

56 A

Threshold Voltage

3 V

Rds On Max

19 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

125 W

96 W

Input Capacitance

1.82 nF

1.37 nF

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-11-12

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon BSC190N15NS3GATMA1 provided by its distributors.

MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

Newark

Power MOSFET, N Channel, 150 V, 50 A, 19 mOhm, TDSON, 8 Pins, Surface Mount

EBV Elektronik

OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

element14 APAC