Infineon IRF6643TRPBF

Name: Infineon IRF6643TRPBF
Brand: Infineon
SKU: IRF6643TRPBF

Single N-Channel 150 V 34.5 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®

$ 0.911

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRF6643TRPBF	44	1	Cut Tape	0.494	0.494	0.494	0.494	0.494
Arrow Electronics	2	IRF6643TRPBF	14,365	1		2.582	1.759	1.379	1.379	1.357
Rochester Electronics	2	IRF6643TRPBF	22,560					1.160	0.963	0.858	17h
RS (Formerly Allied Electronics)		IRF6643TRPBF	27	1	Bulk	0.640	0.640	0.640	0.640	0.640	9h
DigiKey	2	IRF6643TRPBFCT-ND	3	1	Cut Tape	3.060	3.060	3.060	3.060	3.060

Inventory History

3 month trend: -0.15%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6643TRPBF.

Newark

Datasheet10 pages12 years ago

IHS

Future Electronics

Inventory History

3 month trend:

-0.15%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF6643TRPBF

InfineonIRF6643TR1PBF

Price @ 1000

$ 0.911

$ 3.65

Stock

402,347

136,524

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

6.2 A

Threshold Voltage

4 V

Rds On Max

34.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.8 W

Input Capacitance

2.34 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-10-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRF6643TRPBF provided by its distributors.

Single N-Channel 150 V 34.5 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

Trans MOSFET N-CH Si 150V 6.2A 7-Pin Direct-FET MZ T/R

Verical

A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

N CHANNEL MOSFET, 150V, 6.2mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.2mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.0029ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon