Infineon BSC160N15NS5ATMA1

Name: Infineon BSC160N15NS5ATMA1
Brand: Infineon
SKU: BSC160N15NS5ATMA1

Mosfet, N-Ch, 150V, 56A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC160N15NS5ATMA1

$ 1.22

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	BSC160N15NS5ATMA1	14,190	5	Cut Tape		2.220	1.550	1.550	1.550
Future Electronics	2	BSC160N15NS5ATMA1	10,000	5K	Tape & Reel					1.030
Arrow Electronics	3	BSC160N15NS5ATMA1	24,847	1		2.283	1.516	1.432	1.196	1.051
Rutronik		TMOS1713	45,000	5K						1.098	20h
Rochester Electronics		BSC160N15NS5ATMA1	4,123					1.360	1.130	1.010	13h

Inventory History

3 month trend: +11.65%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC160N15NS5ATMA1.

ODG (Origin Data Global)

Datasheet10 pages0 years ago

Inventory History

3 month trend:

+11.65%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSC160N15NS5ATMA1

InfineonBSC190N15NS3GATMA1

Price @ 1000

$ 1.22

$ 1.027

Stock

1,376,039

1,694,494

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

56 A

50 A

Threshold Voltage

3 V

Rds On Max

19 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

96 W

125 W

Input Capacitance

1.37 nF

1.82 nF

Supply Chain

Country of OriginAustria, Germany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2016-01-22

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Descriptions

Descriptions of Infineon BSC160N15NS5ATMA1 provided by its distributors.

Mosfet, N-Ch, 150V, 56A, Tdson Rohs Compliant: Yes |Infineon Technologies BSC160N15NS5ATMA1

Newark

150V 56A 96W 16mΩ@10V,28A 4.6V@60uA N Channel TDSON-8(5.9x5.2) MOSFETs ROHS

HQonline

Trans MOSFET N-CH 150V 36A 8-Pin TDSON EP

Avnet

96KW 20V 4.6V 19nC@ 10V 1N 150V 16m¦¸@ 10V 56A 1.37nF@ 75V TDSON-8

UnikeyIC

Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET FDMS86200 N 0.018R 150V 35A

Component Sense

MOSFET, N-CH, 150V, 56A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0137ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V;

element14 APAC

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.

Infineon