Infineon AUIRFS4410Z

Name: Infineon AUIRFS4410Z
Brand: Infineon
SKU: AUIRFS4410Z

MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity: N Channel; Continuous Drain

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	AUIRFS4410Z	0	3K	Bulk					1.580	18h
Microchip USA	AUIRFS4410Z	196	150	Bulk				11.440	11.440	15m
Win Source	WS-AUIRFS4410Z	1,330	4			10.746	8.731	8.731	8.731	7h
Worldway Electronics	AUIRFS4410Z	8,526	7	Tube		0.203	0.199	0.191	0.187	6h
SHENGYU ELECTRONICS	AUIRFS4410Z	17,449	1		0.628	0.615	0.600	0.580	0.550	1d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRFS4410Z.

IHS

Datasheet13 pages14 years ago

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRFS4410Z

InfineonIRFS4410ZTRLPBF

Price @ 1000

$ 0.952

Stock

67,926

608,132

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

97 A

Threshold Voltage

2 V

Rds On Max

9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

230 W

Input Capacitance

4.82 nF

Supply Chain

Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon AUIRFS4410Z provided by its distributors.

MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

Newark

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

International Rectifier

Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Infineon

MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

element14 APAC