Infineon AUIRF3808S

Name: Infineon AUIRF3808S
Brand: Infineon
SKU: AUIRF3808S

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

$ 7.56

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	AUIRF3808S	0	1	Bulk	8.590	7.560	7.560	7.560	7.560	20h
Farnell	AUIRF3808S	0	1		4.897*	3.726*	3.229*	2.206*	2.206*	7h
Win Source	WS-AUIRF3808S	13,500	60				1.010	0.673	0.673	8h
Worldway Electronics	AUIRF3808S	10,384	7	Tube		0.427	0.419	0.403	0.395	1d
Anlinkda	AUIRF3808S	15,911			0.996	0.892	0.811	0.782	0.767	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF3808S.

IHS

Datasheet13 pages14 years ago

RS (Formerly Allied Electronics)

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-07-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon AUIRF3808S provided by its distributors.

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

International Rectifier

Trans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK Tube

Avnet

TUBE // Automotive MOSFET 75V, 75A, 7 mOhm,150nC Qg, D2Pak

Newark

AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N CH, 75V, 106A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:106A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0059ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

element14 APAC