Infineon AUIRF3205ZS

Name: Infineon AUIRF3205ZS
Brand: Infineon
SKU: AUIRF3205ZS

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

$ 1.24

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	AUIRF3205ZS	1,137					1.490	1.240	1.100	44m
RS (Formerly Allied Electronics)	AUIRF3205ZS	0	10	Bulk		11.140	11.140	11.140	11.140	2h
Farnell	AUIRF3205ZS	0	1		1.767*	1.767*	1.459*	0.954*	0.954*	20h
Win Source	WS-AUIRF3205ZS	98,000	21				2.238	1.877	1.877	1h
Worldway Electronics	AUIRF3205ZS	10,750	7	Bulk		0.391	0.379	0.359	0.359	44m

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF3205ZS.

IHS

Datasheet12 pages10 years ago

Datasheet14 pages15 years ago

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF3205ZS

InfineonIRF3205ZSTRLPBF

Price @ 1000

$ 1.24

$ 0.847

Stock

220,897

1,651,608

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

2 V

Rds On Max

6.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.45 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-07-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-08-15

LTD Date2022-02-15

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Descriptions

Descriptions of Infineon AUIRF3205ZS provided by its distributors.

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) D2PAK Tube

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET,N CH,55V,75A,D2PAK; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:170W; Voltage Vgs Max:20V

element14 APAC

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking; Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering

Infineon