Infineon IRF3205ZSTRLPBF

Name: Infineon IRF3205ZSTRLPBF
Brand: Infineon
SKU: IRF3205ZSTRLPBF

Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK

$ 0.847

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		IRF3205ZSTRLPBF	1,600	800					0.666	0.636	1d
Newark	2	IRF3205ZSTRLPBF	571	1	Cut Tape	2.790	1.870	1.340	1.340	1.340
Rutronik		TMOSP11754	3,200	800					0.612	0.490	10h
Rochester Electronics		IRF3205ZSTRLPBF	3,200					1.020	0.847	0.755	3h
DigiKey	3	IRF3205ZSTRLPBFCT-ND	178	1	Cut Tape	3.240	2.088	1.431	1.431	1.431

Inventory History

3 month trend: -24.27%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3205ZSTRLPBF.

IHS

Datasheet13 pages15 years ago

Datasheet12 pages14 years ago

Newark

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

-24.27%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3205ZSTRLPBF

InfineonAUIRF3205ZS

Price @ 1000

$ 0.847

$ 1.24

Stock

1,627,399

219,702

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

2 V

Rds On Max

6.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.45 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

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Descriptions

Descriptions of Infineon IRF3205ZSTRLPBF provided by its distributors.

Single N-Channel 55 V 6.5 mOhm 76 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

170W(Tc) 20V 4V@ 250¦ÌA 110nC@ 10 V 1N 55V 6.5m¦¸@ 66A,10V 3.45nF@25V D2PAK

Unikeyic (ICkey)

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:170W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRF3205ZSTRLPBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon