Infineon IRFS7540TRLPBF

Name: Infineon IRFS7540TRLPBF
Brand: Infineon
SKU: IRFS7540TRLPBF

60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

$ 0.905

EOL

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark		IRFS7540TRLPBF	24	1		2.880	2.030	1.500	1.420	1.250
Future Electronics	2	IRFS7540TRLPBF	21,600	800	Tape & Reel				0.870	0.825
Arrow Electronics	3	IRFS7540TRLPBF	700	1		2.264	1.591	1.074	1.074	1.074
Rochester Electronics		IRFS7540TRLPBF	212					1.090	0.905	0.807	16h
DigiKey	2	IRFS7540TRLPBFCT-ND	540	1	Cut Tape	2.730	1.762	1.211	1.211	1.211

Inventory History

3 month trend: +10.69%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS7540TRLPBF.

Newark

Datasheet14 pages11 years ago

Datasheet13 pages11 years ago

Datasheet12 pages12 years ago

Inventory History

3 month trend:

+10.69%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS7540TRLPBF

InfineonIRFS7540PBF

Price @ 1000

$ 0.905

$ 1.29

Stock

207,308

33,897

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

110 A

Threshold Voltage

3.7 V

Rds On Max

5.1 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

160 W

Input Capacitance

4.555 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-01-16

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFS7540TRLPBF provided by its distributors.

60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 60V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

MOSFET N CH 60V 110A D2PAK / Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK T/R

Win Source

HEXFET POWER MOSFET Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes

Newark