onsemi FDB8442-F085
$ 1.395
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-12
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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Descriptions
Descriptions of onsemi FDB8442-F085 provided by its distributors.
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ
254W(Tc) 20V 4V@ 250¦ÌA 235nC@ 10 V 1N 40V 5m¦¸@ 80A,10V 28A 12.2nF@25V TO-263AB 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 28A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
28A, 40V, 0.0029OHM, N-CHANNEL,
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time17.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.2 nF
Max Operating Temperature175 °C
Max Power Dissipation254 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation254 W
Rds On Max5 mΩ
Rise Time19.3 ns
Turn-Off Delay Time57 ns
Turn-On Delay Time19.5 ns
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements