Vishay SIHB22N60E-GE3
$ 2.184
Production
Inventory History
3 month trend: -33.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 2.184
$ 1.85
Stock
89,715
33,511
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-263-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
21 A
21 A
Threshold Voltage
2 V
-
Rds On Max
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
227 W
-
Input Capacitance
1.92 nF
1.92 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-11-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
VishaySIHB24N65E-GE3
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
STMicroelectronicsSTB32NM50N
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB25NM60ND
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
STMicroelectronicsSTB31N65M5
N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in D2PAK package
Descriptions
Descriptions of Vishay SIHB22N60E-GE3 provided by its distributors.
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
E-Series N-Channel 600 V 227 W 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -33.78%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.92 nF
Max Operating Temperature150 °C
Max Power Dissipation227 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time59 ns
Turn-On Delay Time18 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements