onsemi FCB20N60FTM

Name: onsemi FCB20N60FTM
Brand: onsemi
SKU: FCB20N60FTM

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK

$ 2.625

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Avnet		FCB20N60FTM	21,600	800					1.938	1.816	5h
Verical		FCB20N60FTM	155	3			4.229	2.625	2.625	2.625
Arrow Electronics		FCB20N60FTM	155	1		6.076	4.229	2.625	2.625	2.625
Rochester Electronics		FCB20N60FTM	26					2.640	2.360	2.220	2h
DigiKey	3	FCB20N60FTMCT-ND	1,795	1	Cut Tape	7.020	4.720	3.420	3.420	3.420

Inventory History

3 month trend: -4.43%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCB20N60FTM.

Upverter

Technical Drawing1 page5 years ago

Newark

Farnell

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-4.43%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFCB20N60FTM

onsemiFCB20N60TM

Price @ 1000

$ 2.625

$ 2.61

Stock

286,648

271,746

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

20 A

Threshold Voltage

5 V

Rds On Max

190 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

208 W

Input Capacitance

3.08 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-08-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCB20N60FTM provided by its distributors.

N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 20 A, 190 mΩ, D2PAK

onsemi

Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20A; Drain Source Voltage, Vds:600V; On Resistance, Rds(on):0.15ohm; Rds(on) Test Voltage, Vgs:10V; Operating Temperature Range:-55°C to +150°C; Package/Case:3-D2Pak

Newark

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Fairchild Semiconductor

MOSFET, N, 600V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK; Capacitance, Ciss typ:2370pF; Case style, alternate:TO-263; Current, Idm pulse:60A; Marking, SMD:FCB20N60F; Pin format:G(1),D(2),S(3); Power dissipation:208W; Power, Pd:208W; Temperature, Tj max:150°C; Termination Type:SMD; Time, fall:65ns; Time, rise:140ns; Time, trr typ:160ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs th max:5V; dv/dt:50V/ns

Farnell