STMicroelectronics STB25NM60ND
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB25NM60ND | 0 | 1 | 5h | ||||||||
| Microchip USA | STB25NM60ND | 256 | 600 | Tray | 21h | |||||||
| Component Stockers USA | STB25NM60ND | 330 | >1wk | |||||||||
| Win Source | WS-STB25NM60ND | 20 | 9 | 6h | ||||||||
| Worldway Electronics | STB25NM60ND | 27,627 | 7 | Tape & Reel | 4h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB25NM60ND.
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|---|---|---|---|
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
Related Parts
STMicroelectronicsSTB23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
STMicroelectronicsSTB32N65M5
N-channel 650 V, 0.095 Ohm, 24 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package
Descriptions
Descriptions of STMicroelectronics STB25NM60ND provided by its distributors.
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
MOSFET N-CH 600V 21A D2PAK / Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK T/R
STB25NM60ND N-channel MOSFET Transistor, 21 A, 600 V, 2+Tab-Pin TO-263
N-Channel 600 V 0.16 Ohm Surface Mount FDmesh II Power MosFet - D2PAK
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.4 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation160 W
Rds On Max160 mΩ
Resistance160 mΩ
Rise Time30 ns
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Turn-On Delay Time60 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB25NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant