Vishay SI7846DP-T1-E3

Name: Vishay SI7846DP-T1-E3
Brand: Vishay
SKU: SI7846DP-T1-E3

Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

$ 1.191

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Verical		SI7846DP-T1-E3	36	7			1.362	0.992	0.992	0.992
Arrow Electronics		SI7846DP-T1-E3	36	1		1.604	1.362	0.992	0.992	0.992
DigiKey	3	SI7846DP-T1-E3CT-ND	22,710	1	Cut Tape	3.880	2.540	1.775	1.454	1.454
TTI		SI7846DP-T1-E3	0	3K	Tape & Reel					1.190	2h
Newark	2	SI7846DP-T1-E3	0	3K	Tape & Reel					1.360

Inventory History

3 month trend: +156%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI7846DP-T1-E3.

Upverter

Technical Drawing1 page14 years ago

Farnell

Newark

Future Electronics

ODG (Origin Data Global)

Inventory History

3 month trend:

+156%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI7846DP-T1-E3

VishaySI7846DP-T1-GE3

Price @ 1000

$ 1.191

$ 1.437

Stock

1,204,414

147,025

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

4 A

Threshold Voltage

4.5 V

Rds On Max

50 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.9 W

Input Capacitance

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-08-13

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Vishay SI7846DP-T1-E3 provided by its distributors.

Single N-Channel 150 V 0.05 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

Future Electronics

Trans MOSFET N-CH 150V 4A Automotive 8-Pin PowerPAK SO T/R / MOSFET N-CH 150V 4A PPAK SO-8

Win Source

N-CHANNEL 150-V (D-S) MOSFET Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET TRANSISTOR; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:24.5A; Package / Case:SOIC-8; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Mosfet, N Channel, 150V, 0.041Ohm, 4A, Powerpak So, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.9Wrohs Compliant: No |Vishay SI7846DP-T1-E3.

Newark