Vishay SI7898DP-T1-E3
$ 0.903
Production
Inventory History
3 month trend: +12.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-09-11
Lifecycle StatusProduction (Last Updated: 3 months ago)
Related Parts
Descriptions
Descriptions of Vishay SI7898DP-T1-E3 provided by its distributors.
SI7898DP-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 3 A, 150 V, 8-PIN SOIC
Single N-Channel 150 V 0.085 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Tran; N CHANNEL MOSFET, 150V, 4.8A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; No. of Pins:8
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +12.85%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3 A
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Manufacturer Package IdentifierS17-0173-Single
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9 ns
Dimensions
Height1.12 mm
Length4.9 mm
Width5.89 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements