onsemi FDS2572

Name: onsemi FDS2572
Brand: onsemi
SKU: FDS2572

N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

$ 0.809

Production

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Distributor		SKU		Min	Pkg
Newark	2	FDS2572	69	1	Cut Tape	2.730	1.870	1.700	1.700	1.700
Verical	3	FDS2572	2,500	2500						0.683
Arrow Electronics	2	FDS2572	1,212	1		0.920	0.841	0.771	0.750	0.750
Rochester Electronics		FDS2572	4,834					0.934	0.775	0.691	1d
DigiKey	2	FDS2572DKR-ND	1,746	1	Custom Reel	2.600	1.674	1.143	0.843	0.843

Inventory History

3 month trend: -43.92%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDS2572.

IHS

Datasheet13 pages2 years ago

Datasheet12 pages24 years ago

Newark

Upverter

Fairchild Semiconductor

onsemi

Inventory History

3 month trend:

-43.92%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-09-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FDS2572 provided by its distributors.

N-Channel UltraFET® Trench MOSFET 150V, 4.9A, 47mΩ

onsemi

N-Channel 150 V 47 mOhm UltraFET Trench Mosfet SOIC-8

Future Electronics

Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Package/Case:8-SOIC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Current Rating:4.9A; Mounting Type:Surface Mount; No. of Pins:8 ;RoHS Compliant: No

Newark

UltraFET® devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; SMD Marking:FDS2572; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

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